CCR Technology Overview
Founded in 1995, CCR Technology brought fresh ideas to RF - Plasma Technology used in industrial applications. Today we have over 1,500 units operating in over 40 countries in supporting solar, precision optics, storage media, semiconductor or hard and decorative coatings markets.
The core to our success is our proprietary COPRA Plasma Technology® based sources that support the original equipment manufacturers, end uses and research groups with a wide array of COPRA Plasma Sources. The target applications are plasma enhanced chemical vapor deposition "PECVD" of silicon, metal oxides and nitrides for barrier and functional layers, for optical filter stacks as for protective and wear and decorative coatings, as well as the assistance of PVD processes (i.e. sputter and E-gun assist) for:
Improved Adhesion and Density: Ion beam assistance increases film density and improves bonding, crucial for wear-resistant and durable coatings.
Controlled Microstructure: Plasma assistance optimizes coating texture and structure, such as maintaining specific crystal phases in thermal barrier coatings (TBCs).
Surface Cleaning and Activation: Plasma is used to clean and activate substrate surfaces prior to deposition, removing contaminants and ensuring high-quality, stable coatings.
Reactive Deposition: Plasma enhances chemical reactions for producing compound films, such as oxides or nitrides.
These advancements make assisted PVD essential for industries requiring high-performance coatings, including aerospace, semiconductor manufacturing, and advanced engineering.
CCR COPRA Plasma Technology is a filament less, Radio Frequency (RF) driven, low-pressure plasma source technology. The RF power is inductively coupled to the plasma through a matching network and a single-turn excitation electrode. A key feature is the tunable matching network incorporated into the source itself. The matching network comprises resonant circuits which employ variable capacitors to match impedance and hence maximize the power transfer efficiency to the plasma. The beam produced by the COPRA Plasma Technology is quasi-neutral, containing roughly the same number of ions and electrons permitting deposition, etching and surface modification of both conducting and insulating substrate materials without significant built-up charge which can cause material degradation among other things.
The essential feature of the COPRA Plasma Technology is the excitation mechanism of the plasma, for any kind of molecular gases resulting in the degree of dissociation is always close to 100%. The COPRA unique design directly controls the high amount of atomic species and is not dependent on the RF-power. This high degree of dissociation in all CCR sources allows the plasma density to reach values of more than 1E12/cm³. The independent control of ion energy and ion current density as a function of RF-power makes COPRA critical enabling technology for the precision optics thin film deposition applications.
CCR COPRA Plasma Assist allows operation at ion energies which only will cause densification without creating defects and simply by increasing the ion current density by increasing the RF power leads you to a thermally stable drift free solid film. The COPRA RF-ICP Plasma Beam Technology is scalable from R&D to production while maintaining constant basic plasma parameters.
Are you interested in learning what CCR Technologies can do for your company? Reach out to IES and let us help connect you with the right fit for your application.