Ion Beam Sources
Ion Beam Sources
IES ion beam sources have been designed to provide superior Gridless End-Hall ion beam source performance across large and small substrates. IES technology offers low pressure operation (10^-5 mbar) for longer mean free path and higher ion energies than traditional End Hall sources.
The Telemark source design is extremely low maintenance with no replaceable internal components. The IES ion beam source line is capable of either mixed gas or pure oxygen operation, allowing for deposition of metal oxide films of the highest index and lowest stress. Patented Pulsed Mode for ion assisted fluorides provides fully compacted, damage free results not achievable with any other ion source.
IES sources achieve stable films with no substrate pre-heating, and are an excellent choice for depositing durable films on low temperature substrates.
Models
Ion Beam Source
The Gridless End-Hall Ion Sources have been specially developed to provide a cost effective solution for ion assisted vacuum processes from small to large sized deposition systems. The sources provide an extremely reliable and maintenance-free up to 3kW source for many applications in PVD processes.
The compact design and rugged construction allows easy installation to both new and existing vacuum deposition systems.
UHV Ion Beam Source
These Ion Sources have been specially developed to provide a cost effective solution for ion assisted processes for small to medium sized UHV deposition systems. The source provides an extremely reliable and maintenance-free 500W source for many applications in PVD processes.
The compact design and rugged construction allows easy installation to both new and existing UHV vacuum deposition systems.
Ion Current Monitor
The Ion Current Monitor provides essential deposition information for most ion-based process. The ICM monitors the flux of positive ions and outputs the beam current in units of amps per square centimeter. Three amplifier ranges are provided to adequately cover the flux density output from a wide range of commercially available ion beam sources. An adjustable bias voltage is provided to reject negatively charged particles (electrons).
