Rapid Thermal Processing and Direct Liquid Injection Deposition Systems

Rapid Thermal Processing and Direct Liquid Injection Deposition Systems

The Annealsys Rapid Thermal Processing (RTP) systems are crucial tools in semiconductor manufacturing and materials science research. These systems are designed to quickly and precisely heat semiconductor wafers or substrates to high temperatures, typically ranging from hundreds to over a thousand degrees Celsius. RTP systems offer uniform heating across the substrate, enabling precise control over material deposition and annealing processes. They are widely used for depositing thin films through methods like chemical vapor deposition (CVD) and physical vapor deposition (PVD), as well as for annealing existing films to repair defects or activate dopants. RTP systems feature advanced control systems that allow for precise temperature profiles and atmospheric control within the processing chamber, making them indispensable for creating advanced semiconductor devices and conducting materials research.

Annealsys also provides Direct Liquid Injection Deposition systems. Direct Liquid Injection Deposition (DLID) systems are innovative tools used primarily in the fabrication of thin films and coatings. DLID systems operate by injecting liquid precursor solutions directly onto a substrate, which is then heated to evaporate the solvent and initiate chemical reactions, resulting in the deposition of a thin film. These systems offer advantages such as high material utilization efficiency, low waste generation, and the ability to deposit complex materials, including organic compounds, ceramics, and functional coatings. DLID systems are especially suited for applications in flexible electronics, organic electronics, and printed electronics due to their ability to deposit materials at low temperatures, making them compatible with various substrates, including plastics and flexible substrates.

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Models

DLI-CVD and DLI-ALD Systems

Annealsys is developing processes for the deposition of multi metallic oxides, metal, transition metal nitrides layers and also 2D materials including graphene, hexagonal boron nitride and transition metal dichalcogenides (TMDs). Machines are available for substrates up to 50 mm, 100 mm or 200 mm diameter. Small 3D parts (few centimeters size) can be processed in the 50 mm machine. Our DLI deposition systems offer multiprocess capabilities inside the same process chamber: DLI-CVD, DLI-ALD, MOCVD, pulse pressure CVD and even in-situ rapid thermal processing (RTP) for the MC-050.

RTP and RTCVD Versatile Systems

The Annealsys RTP systems have infrared lamp furnaces that can perform annealing up to 1450°C and for duration up to 1 hour at 1200°C. The high temperature Zenith system can run process at 2000°C for 1 hour. Applications include Rapid Thermal Annealing (RTA) processes like ohmic contact annealing and implantation annealing as well as Rapid Thermal Chemical Vapor Deposition (RTCVD) of graphene or hexagonal Boron Nitride (h-BN). These versatile RTP systems can process samples from few mm² up to 200 mm diameter with manual loading or cassette to cassette robot handling for production, including customized solutions for processing compound semiconductor wafers with susceptors.