SiC Superjunction Implanter Solutions

In ion implantation in the semiconductor industry, ions are applied to and introduced into substrates such as wafers (doping, introduction of controlled defects, etc.) to achieve a targeted change in the properties of the base material and/or the already applied layers.

Adenso offers customized Implanter.Modules (IMP) as part of the modular VAC.ROBOTICS platform, enabling customers to easily and quickly build new end stations/implanter systems and apply and develop new ion implantation technologies.

For new ion implantation processes such as superjunction technologies for SiC (silicon carbide) MOSFETs up to 3.3 kV, Adenso's compact implanter modules, already proven in industrial series production, are ideally suited for high-volume manufacturing, especially in combination with the SubstrateScanner solutions for precise scanning movements of the SiC substrates/wafers in the ion beam. A unique selling point is the availability of Adenso's implanter chambers with DUAL.SCAN kinematics, enabling the insertion of various substrates and/or achieving maximum throughput.

eChuck systems (electrostatic substrate carriers) enable flexible wafer fixation even with large deflections (wafer bow). Various tilt and twist kinematics are optionally available to optimally align the wafers for the respective implantation process.

Supplemented with a heating chuck capable of temperatures up to 1,000°C, significant throughput increases are achieved in high-temperature applications.

Further options include a variety of steel controllers, calibration equipment, and measurement technology. In many cases (e.g., with SiC MOSFETs), these enable a reduction to fewer implantation steps, resulting in significant cost savings and increased throughput. Applications for such silicon carbide-based MOSFETs using SiC superjunction technology are diverse: automotive drivetrains, EV charging, solar energy systems, energy storage, high-power traction inverters, etc.

The WHM-IMP.Module is designed for substrate dimensions up to 350mm (round/square), on which wafer sizes of 200/150/100/75/50/25mm can also be processed.

Direct substrate handling and carrier solutions are available for all substrate sizes and dimensions (round, rectangular, special).

  • Flexible, customer-specific configuration based on production-proven solutions
  • Fast commissioning thanks to modularity in hardware and software
  • Integration of customer-specific ion implantation technologies and measuring equipment

 

Learn more about Adenso's SiC Superjunction Implanter solutions here, or contact IES today to learn more.