SSS.SubstrateScanner
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The Adenso Scanner.Solutions are ideal for processing SiC wafers (silicon carbide), especially in combination with the heating chuck up to 1,000°C New technologies such as SiC superjunction for SiC MOSFETS can be precisely processed and further developed on industrially proven Adenso solutions.
PERFORMANCE & SPECIFICATIONS
- Benefits
- vertical.scanner – for fast and high precise substrate movements, in case the ion beam can only be formed in one dimension
- DUAL.SCAN Solution – comes with two scanning modules – for highest thruput and/or filter/substrate combinations
- active-/passive-substratt – beam filter technology
- heat/cool – chuck systems available (up to 1.000°C)