The Zenith-150 high temperature rapid thermal processor can process samples up to 6-inch diameter at temperature up to 2000°C, one hour. Silicon Carbide implant annealing Graphene by SiC sublimation RTCVD of graphene High temperature annealing. The system has a stainless steel water-cooled chamber. The cold wall chamber technology provides significant advantages: low memory effect, higher cooling rates. The high temperature tungsten heaters provide enhanced temperature uniformity. The pyrometer associated with the fast digital PID controller assure accurate and repeatable thermal control across the temperature range. The design process chamber provides easy loading and unloading of the substrates and the installation of the thermocouple for calibration.