Annealsys AS-Master
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The AS-Master system can process wafers up to 200 mm diameter at temperature up to 1450°C for the high temperature version. The cross lamp furnace with multi zone control insures enhanced temperature uniformity. Different furnace configurations are available depending on the application. Pyrometer and thermocouple temperature measurements are standard features. The fast digital PID temperature controller provides accurate thermal control across the temperature range. The AS-Master can receive a temperature controlled double quartz window and sample rotation to perform RTCVD processes. Loadlock and cassette to cassette loading are optional features.
PERFORMANCE & SPECIFICATIONS
- Specifications
- Substrate Size: Up to 200mm diameter - capability for 3x100 mm wafers small substrate using susceptors
- Process Chamber: stainless steel cold wall chamber technology
- Vapors, and Gas
- Up to 8 process gas lines with digital mass flow controllers. One purge gas line with vacuum valve and vacuum gauge
- Control
- Full PC control, up to 100 steps per recipe Human interface designed in respect of SEMI E95-0200 Full data logging and process historicals
- Temperature Range
- Up to 1150°C, 1250°C or 1450°C depending upon version

