CCR Technology COPRA DN200 Round ICP Sources

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The CCR Technology COPRA DN201 Round Plasma Sources are designed to be used for Research and Development in the field of Plasma Surface Science on small substrates of up to 3" wafer size. High plasma densities in combination with dissociation degrees of up to 90% enable accurate activation/cleaning and etching as also post oxidation/nitridation of PVD processes. Those COPRA DN201 Round Plasma Sources are also enabling basic PECVD processes. The result achieved by the COPRA DN201 Round Plasma Sources are transferable on larger substrate dimensions by using another type of our COPRA plasma sources for larger substrate sizes. The COPRA DN201 Round Plasma Source is the ideal partner for R&D labs and small productions, as this source can be used for a variety of applications from surface activation to PECVD to etching applications. The COPRA DN201 Round Plasma Source is available in both manual and remote controlled versions.

PERFORMANCE & SPECIFICATIONS

  • Benefits
    • Plasma: Neutral Plasma Beam (no filament)
    • Impedance Match: Remote Match
    • Pressure Range: 1x10-4 to 1x10-1 mbar

 

 

Plasma Opening Ø (mm)
Plasma Opening
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Grouped product items
PART NUMBER Plasma Opening Ø (mm) Substrate Width (mm) Flange Size Controller Code REQUEST FOR QUOTE
DN200-X-12502

Plasma Opening Ø (mm) 110 mm

Substrate Width (mm) 4 mm

Flange Size DN200ISO-QF

Controller CRC

Code GM

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DN200-X-12822

Plasma Opening Ø (mm) 110 mm

Substrate Width (mm) 4 mm

Flange Size DN200ISO-QF

Controller -

Code GR

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DN200-XE-12831

Plasma Opening Ø (mm) 110 mm

Substrate Width (mm) 4 mm

Flange Size DN200ISO-QF

Controller -

Code EGR

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DN200-XE-12512

Plasma Opening Ø (mm) 110 mm

Substrate Width (mm) 4 mm

Flange Size DN200ISO-QF

Controller -

Code EGM

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DN200-12202

Plasma Opening Ø (mm) 122 mm

Substrate Width (mm) 4 mm

Flange Size DN200CF

Controller -

Code GM

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