Rounc ICP Source DN501 DPRPE, Plasma Opening 12.05"

The COPRA DN501 Round Plasma Source is a flange mounted RF-ICP source solutions for wafer sized substrates of up to 12". As smaller COPRA DN401 the COPRA DN501 Round Plasma Source series enable highly competitive etching and oxidation/nitridation processes and can be used with any type of gas. These sources are nowadays enabling benchmarking post oxidation/nitridation of metallized films. They are customizable to be used in reactive etching processes requiring damage preventing low ion energy inputs paired with excellent ion current densities. These COPRA DN501 Round Plasma Source solutions handle tight semiconductor specific requirements.
Plasma Opening Ø (mm) : 306 mm
Substrate Width (mm) : 220 mm
Controller: CRC
Code: DPRPE